高级检索
    梁勇明, 周建新, 张芸秋. 铜箔形貌对石墨烯生长质量影响的表面氧化法评判[J]. 机械工程材料, 2015, 39(7): 25-30. DOI: 10.11973/jxgccl201507005
    引用本文: 梁勇明, 周建新, 张芸秋. 铜箔形貌对石墨烯生长质量影响的表面氧化法评判[J]. 机械工程材料, 2015, 39(7): 25-30. DOI: 10.11973/jxgccl201507005
    LIANG Yong-ming, ZHOU Jian-xin, ZHANG Yun-qiu. Surface Oxidation Method Judging of the Effect of Cu Foil Morphology on Graphene Growth Quality[J]. Materials and Mechanical Engineering, 2015, 39(7): 25-30. DOI: 10.11973/jxgccl201507005
    Citation: LIANG Yong-ming, ZHOU Jian-xin, ZHANG Yun-qiu. Surface Oxidation Method Judging of the Effect of Cu Foil Morphology on Graphene Growth Quality[J]. Materials and Mechanical Engineering, 2015, 39(7): 25-30. DOI: 10.11973/jxgccl201507005

    铜箔形貌对石墨烯生长质量影响的表面氧化法评判

    Surface Oxidation Method Judging of the Effect of Cu Foil Morphology on Graphene Growth Quality

    • 摘要: 采用简化的电化学抛光工艺得到了具有平整表面的铜箔,然后分别以电化学抛光前后的铜箔为基底,通过化学气相沉积法制备了石墨烯,利用原子力显微镜、光学显微镜、扫描电镜、电子能谱仪、拉曼光谱和I-V特性电学测试仪等研究了铜箔表面形貌与石墨烯质量的关联,并通过表面氧化法来判断石墨烯是否在基底上生长完全.结果表明:在抛光铜箔上生长的石墨烯缺陷较少、形貌完整,并且导电性能明显提高;表面氧化法可以快速准确判断石墨烯的生长质量.

       

      Abstract: Copper foils with smooth surface were prepared by simplified electrochemical polishing process,and then the copper foils before and after electrochemical polishing were taken as the substrate to prepare graphenes by chemical vapor deposition (CVD) method.The relationship between copper foil surface morphology and graphene quality was studied via atomic force microscopy (AFM),optical microscopy(OM),scanning electron microscopy (SEM),energy dispersive spectrometer (EDS),Raman spectrum and I-V measurements.Surface oxidation method was used to judge the growth quality of the graphene.The results show that the graphene grown on the copper foil after polishing had a small number of defects,integrated morphology and obviously improved conductivity.Surface oxidation method could rapidly and accurately judge the growth quality of the graphene.

       

    /

    返回文章
    返回