直接敷铜工艺制备Cu/AlN材料的界面结构及结合性能

Interface Structure and Bonding Properties of Cu/AlN Material Fabricated by Direct Bonded Copper Process

摘要: 通过直接敷铜（DBC）工艺，在AlN陶瓷基板表面于1 000~1 060℃的敷接温度下制备Cu/AlN材料，利用机械剥离机、场发射扫描电子显微镜和X射线衍射仪分析了Cu/AlN的界面结合强度、界面微观形貌和物相组成。结果表明：铜箔和AlN陶瓷基板间的结合强度超过了8.00 N·mm^-1，铜箔和AlN陶瓷之间存在厚度约为2 μm的过渡层，过渡层中主要含有Al₂O₃、CuAlO₂和Cu₂O化合物；随着敷接温度升高，Cu/AlN的界面结合强度逐渐增大。

Abstract: By direct bonded copper (DBC) process, Cu/AlN material was fabricated successfully on AlN ceramic substrate at bonding temperatures of 1 000-1 060℃. The bonding strength, morphology and phase composition of Cu/AlN interface were investigated by mechanic testing equipment, field emission scanning electron microscope and X-ray diffractometer. The results show that the bonding strength of Cu/AlN interface was more than 8.0 N·mm^-1, a transition layer with thickness of 2 μm was found between copper foil and AlN ceramic, the transition layer was mainly composed of Al₂O₃, CuAlO₂ and Cu₂O. The bonding strength of Cu/AlN interface increased as the bonding temperature gradually went up.