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    麻永林, 赵娜娜, 刘宝志, 张浩, 赵尖, 张磊, 邢淑清. 普通取向硅钢在冷轧及退火过程中的组织及织构演变[J]. 机械工程材料, 2017, 41(6): 25-29. DOI: 10.11973/jxgccl201706007
    引用本文: 麻永林, 赵娜娜, 刘宝志, 张浩, 赵尖, 张磊, 邢淑清. 普通取向硅钢在冷轧及退火过程中的组织及织构演变[J]. 机械工程材料, 2017, 41(6): 25-29. DOI: 10.11973/jxgccl201706007
    MA Yonglin, ZHAO Nana, LIU Baozhi, ZHANG Hao, ZHAO Jian, ZHANG Lei, XING Shuqing. Evolution of Structure and Texture of Common Grain-Oriented Silicon Steel during Cold Rolling and Annealing[J]. Materials and Mechanical Engineering, 2017, 41(6): 25-29. DOI: 10.11973/jxgccl201706007
    Citation: MA Yonglin, ZHAO Nana, LIU Baozhi, ZHANG Hao, ZHAO Jian, ZHANG Lei, XING Shuqing. Evolution of Structure and Texture of Common Grain-Oriented Silicon Steel during Cold Rolling and Annealing[J]. Materials and Mechanical Engineering, 2017, 41(6): 25-29. DOI: 10.11973/jxgccl201706007

    普通取向硅钢在冷轧及退火过程中的组织及织构演变

    Evolution of Structure and Texture of Common Grain-Oriented Silicon Steel during Cold Rolling and Annealing

    • 摘要: 采用光学显微镜、扫描电镜、X射线衍射仪等分析了在冷轧及退火过程中不同工序段普通取向硅钢的组织和织构演变情况。结果表明:一次冷轧并经850℃×6 min脱碳退火后,取向硅钢发生一次再结晶,晶粒由纤维状转变为等轴状,平均晶粒尺寸为25μm,织构主要有001<010>、111<112>和Goss织构等;在二次冷轧后,晶粒明显变小,且再次转变为纤维状,织构主要为α织构和γ织构;经1 170℃高温退火后,取向硅钢发生二次再结晶,一次再结晶晶粒异常长大,晶粒尺寸达到厘米级;拉伸平整退火后,晶粒更为圆整均匀,平均晶粒尺寸为2.28 cm,Goss织构取向密度最大,达到24。

       

      Abstract: The evolution of microstructure and texture of common grain-oriented silicon steel, which was captured from different processes during cold rolling and annealing, was analyzed by the optical microscope, scanning electron microscope, X-ray diffractometer, etc. The results show that after first cold rolling and decarburizing annealing at 850℃ for 6 min, in the grain-oriented silicon steel the primary recrystallization occurred and the grains transformed from fibrous structure into equiaxed structure with the average grain size of 25 μm. The textures mainly consisted of 001<010>, 111 <112>, Goss texture, and so on. After the second cold rolling, the grains became smaller in size and transformed into fibrous structure once again. The textures mainly consisted of α texture and γ texture. After annealing at 1 170℃, the second recrystallization occurs in the grain-oriented silicon and the first recrystallization grains grew abnormally, reaching the centimeter level in size. After drawing planishing annealing, the grains became smoother and more homogeneous with the average grain size of 2.28 cm. The orientation density of Goss texture reached the maximum degree of 24.

       

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