Abstract: Na_0.5Y_0.5TiO₃ (NYT) ferroelectric thin film was prepared on the substrate of single-crystal niobium doped strontium titanate (Nb:STO) with001 orientation by radio frequency magnetron sputtering. The phase composition, microstructure, ferroelectric properties and electrical transport properties of the ferroelectric thin film were studied. The results show that the NYT thin film had a001 oriented epitaxial structure, the surface was smooth, the interface was clear, and the crystalline quality was good. The NYT thin film had ferroelectric properties with remanent polarization of 0.3 μC·cm^-2 and coercive field of 178 kV·cm^-1. The Schottky barrier was found at the NYT thin film/electrode interface. The reverse-biased Schottky junction decreased the leakage current density significantly and increased the breakdown electric field strength of NYT thin film. The current conduction in the forward-biased state of Schottky junction complied with the space charge limited current mechanism controlled by trapping state.