高级检索
    杨文婷. 在氧化铟锡导电玻璃上化学浴沉积ZnO纳米线[J]. 机械工程材料, 2019, 43(3): 33-38. DOI: 10.11973/jxgccl201903007
    引用本文: 杨文婷. 在氧化铟锡导电玻璃上化学浴沉积ZnO纳米线[J]. 机械工程材料, 2019, 43(3): 33-38. DOI: 10.11973/jxgccl201903007
    YANG Wenting. Chemical Bath Deposition of ZnO Nanowires on Indium Tin Oxide Conductive Glass[J]. Materials and Mechanical Engineering, 2019, 43(3): 33-38. DOI: 10.11973/jxgccl201903007
    Citation: YANG Wenting. Chemical Bath Deposition of ZnO Nanowires on Indium Tin Oxide Conductive Glass[J]. Materials and Mechanical Engineering, 2019, 43(3): 33-38. DOI: 10.11973/jxgccl201903007

    在氧化铟锡导电玻璃上化学浴沉积ZnO纳米线

    Chemical Bath Deposition of ZnO Nanowires on Indium Tin Oxide Conductive Glass

    • 摘要: 以Zn(NO32·6H2O、六亚甲基四胺和聚乙烯亚胺(PEI)为原料,采用化学浴沉积法在沉积了ZnO种子层的氧化铟锡导电玻璃衬底上制备ZnO纳米线,研究了种子层沉积温度(150,200 ℃)以及PEI浓度(0~9.0 mmol·L-1)、生长时间(3~12 h)和水浴温度(65~95 ℃)对ZnO纳米线形貌和尺寸的影响。结果表明:在试验参数下均能成功制备得到ZnO纳米线;当种子层沉积温度为200 ℃,生长时间为9 h,水浴温度为95 ℃,PEI浓度为4.5 mmol·L-1时,ZnO纳米线呈规则六棱柱状生长,并垂直排列于衬底上,且长径比最大,达20.56。

       

      Abstract: With Zn(NO3)2·6H2O, hexamethylenetetramine and polyethyleneimine (PEI) as raw materials, ZnO nanowires were synthesized on indium tin oxide conductive glass substrate by chemical bath deposition; the substrate was pre-deposited a ZnO seed layer. The deposition temperature of seed layer (150, 200 ℃), PEI concentration (0-9.0 mmol·L-1), growth time (3-12 h) and water bath temperature (65-95 ℃) on morphology and size of the ZnO nanowires were studied. The results show that ZnO nanowires were successfully prepared with all the experimental parameters. When the seed layer deposition temperature was 200 ℃, the growth time was 9 h, the water bath temperature was 95 ℃, and the PEI concentration was 4.5 mmol·L-1, the ZnO nanowires grew in regular hexagonal wurtzite structure, and arranged vertically on the substrate; the nanowires had the largest aspect ratio of 20.56.

       

    /

    返回文章
    返回