Abstract:
Ca
0.925Sm
0.05Cu
3-yMg
yTi
4O
12 (
y=0, 0.05, 0.10, 0.15, 0.20, molar fraction/%) thin films were prepared on Si(100) substrate by sol-gel method. Effects of Mg doping amount on phase composition, micromorphology, dielectric property and pressure-sensitive performance of the film were studied. The results show that the thin films with different doping amounts of Mg were mainly composed of polycrystalline CaCu
3Ti
4O
12 phase and a small amount of SiC and CaTiO
3 phases. With increasing Mg doping amount, the grain size and relative dielectric constant of the film increased. After doping with 0.10mol% Mg, the film had the highest density and the smallest dielectric loss at relatively low frequencies. The thin films with different doping amounts of Mg exhibited a nonlinear relationship between current density and electric field strength. When the film was doped with 0.10mol% Mg, its nonlinear coefficient was the largest, and leakage current was relatively small.