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    马尧, 岳源. 热处理对激光选区熔化成形AlSi10Mg合金中共晶硅形貌与分布的影响[J]. 机械工程材料, 2020, 44(4): 40-45. DOI: 10.11973/jxgccl202004008
    引用本文: 马尧, 岳源. 热处理对激光选区熔化成形AlSi10Mg合金中共晶硅形貌与分布的影响[J]. 机械工程材料, 2020, 44(4): 40-45. DOI: 10.11973/jxgccl202004008
    MA Yao, YUE Yuan. Effect of Heat Treatment on Morphology and Distribution of Eutectic Silicon in AlSi10Mg Alloy Prepared by Selective Laser Melting[J]. Materials and Mechanical Engineering, 2020, 44(4): 40-45. DOI: 10.11973/jxgccl202004008
    Citation: MA Yao, YUE Yuan. Effect of Heat Treatment on Morphology and Distribution of Eutectic Silicon in AlSi10Mg Alloy Prepared by Selective Laser Melting[J]. Materials and Mechanical Engineering, 2020, 44(4): 40-45. DOI: 10.11973/jxgccl202004008

    热处理对激光选区熔化成形AlSi10Mg合金中共晶硅形貌与分布的影响

    Effect of Heat Treatment on Morphology and Distribution of Eutectic Silicon in AlSi10Mg Alloy Prepared by Selective Laser Melting

    • 摘要: 通过激光选区熔化(SLM)技术制备AlSi10Mg合金,分析了沉积态合金的显微组织,研究了3种热处理工艺(T6、T2、T6+T2)对共晶硅形貌和分布的影响。结果表明:沉积态合金表面熔池由中心向边界依次为细晶区、粗晶区和重熔区,合金中共晶硅呈短纤维状,尺寸为纳米级;热处理前后,AlSi10Mg合金均由铝、硅以及Mg2Si相组成;热处理后共晶硅分布更加均匀,组织均匀性提高;沉积态合金依次经T6,T2工艺处理后,其共晶硅的硅元素含量增加,共晶硅纯度提高。

       

      Abstract: The AlSi10Mg alloy was prepared by selective laser melting (SLM). The microstructure of the as-deposited alloy was analyzed, and effects of three heat treatment processes (T6, T2, T6+T2) on the morphology and distribution of eutectic silicon were studied. The results show that the molten pool on surface of the as-deposited alloy was divided into three areas, fine grain zone, coarse grain zone and remelting zone, in order from center to border. The eutectic siliton was in the form of short fiber with nanometer size. Before and after heat treatment, the AlSi10Mg alloy consisted of aluminum, silicon and Mg2Si phases. The eutectic silicon distributed more uniformly after heat treatment, showing that the homogeneity of the structure was improved. The silicon content of eutectic silicon of the as-deposited alloy increased after heat-treatment by T6 and T2 processes in turn, and the purity of eutectic silicon was improved.

       

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