Abstract: In recent years, the rapid development of integrated circuit, heat exchanger, semiconductor industry has put forward higher requirements for the thermal conductivity of SiC ceramics. The thermal conductivity at room temperature of SiC ceramics is much lower than the theoretical value of single crystal SiC because of the defects such as lattice oxygen, grain boundary and porosity. The effects of additives and sintering process on the thermal conductivity at room temperature of SiC ceramics are reviewed. The future development direction of high thermal conductivity SiC ceramics is prospected.