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    富氧气氛烧结对SnO2压敏电阻微观结构与电学性能的影响

    Effect of Oxygen-enriched Atmosphere Sintering on Microstructure and Electrical Properties of SnO2 Varistors

    • 摘要: 分别在空气气氛和富氧气氛(氧气体积分数分别为30%,40%,50%)下烧结制备SnO2压敏电阻,研究了烧结气氛中氧气含量对SnO2压敏电阻微观结构和电学性能的影响。结果表明:与空气气氛相比,在富氧气氛中烧结的压敏电阻的物相组成与晶粒尺寸相近,气孔更少,致密性更好;随着富氧气氛中氧气含量的增多,压敏电阻的电学性能提高,尤其在氧气体积分数为50%时,压敏电阻的非线性系数提高了46.9%,电压梯度提高了45.9%,泄漏电流降低了30.0%。

       

      Abstract: SnO2 varistors were sintered in air atmosphere and oxygen-enriched atmosphere (oxygen volume fractions of 30%, 40%, and 50%, respectively), and the effects of oxygen content in sintering atmosphere on microstructure and electrical properties of SnO2 varistors were studied. The results show that the phase composition and grain size of the varistor sintered in the oxygen-riched atmosphere were similar to those sintered in the air atmosphere, and the varistor had fewer pores and better compactness. With increasing oxygen content in the oxygen-riched atmosphere, the electrical performance of the varistor increased, especially when the oxygen volume fraction was 50%, the nonlinear coefficient of the varistor increased by 46.9%, the voltage gradient increased by 45.9%, and leakage current was reduced by 30.0%.

       

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