Abstract:
SnO
2 varistor doped with SiO
2 of different mole fractions (0.01%, 0.05%, 0.10%, 0.15%, 0.20%) was prepared by traditional method. The effect of SiO
2 doping amounts on the electrical performance of SnO
2 varistor was studied. The results show that with the increase of SiO
2 doping amounts, the voltage gradient, nonlinear coefficient, barrier height, donor density and interfacial state density of SnO
2 varistor first increased and then decreased, the leakage current density first decreased and then increased, and the grain boundary resistance increased. When the mole fraction of SiO
2 was 0.10%, the SnO
2 varistor had the best comprehensive electrical performance, with the largest voltage gradient, nonlinear coefficient, donor density, interfacial state density and the barrier height, and the smallest leakage current density, which were 582 V·mm
-1, 33, 1.7×10
23 m
-3, 6.7×10
16 m
-2, 2.03 eV, 7.06 μA·cm
-2, respectively.