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    单晶SiC微纳力学性能测试与材料去除机制的研究进展

    Research Progress on Micro and Nano Mechanical Properties Testing and Material Removal Mechanism of Monocrystalline SiC

    • 摘要: 单晶SiC是第三代半导体的核心材料,广泛应用于微/纳机电系统、传感器和柔性电子器件的组件制备。单晶SiC的微纳力学性能与宏观尺度下不同,表现出显著的尺寸效应,而且其硬度高、脆性强,导致微纳加工效率低、成本高、质量差。研究单晶SiC的微纳力学性能与材料去除机制是实现高效、高精度微纳加工,进而提高器件功能性和可靠性的关键。总结了微纳力学性能测试方法,归纳了微纳加工材料去除机制类型,综述了试验与模拟研究微纳加工材料去除机制的研究进展,提出了单晶SiC微纳加工领域存在的问题,并对未来发展方向进行展望。

       

      Abstract: As a core material of the third-generation semiconductor, monocrystalline SiC is widely used in the component preparation of micro/nano-electromechanical systems, sensors and flexible electronic devices. The micro and nano mechanical properties of monocrystalline SiC are different from those at the macroscopic scale, showing significant size effects. Moreover, its high hardness and brittleness lead to low efficiency, high cost and poor quality in micro and nano processing. Studying the micro and nano mechanical properties and material removal mechanism of monocrystalline SiC is the key to achieving efficient and high-precision micro and nano processing and further improving the functionality and reliability of devices. The micro and nano mechanical performance testing methods are summarized, the types of micro and nano processing material removal mechanisms are classified, the research progress of test and simulation studies on the micro and nano processing material removal mechanisms are reviewed, the existing problems in the micro and nano processing of monocrystalline SiC are proposed and the future development directions are prospected.

       

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