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    吴虎城, 张德坤, 李伟. 碳离子注入前后单晶硅的摩擦性能对比[J]. 机械工程材料, 2007, 31(12): 66-68.
    引用本文: 吴虎城, 张德坤, 李伟. 碳离子注入前后单晶硅的摩擦性能对比[J]. 机械工程材料, 2007, 31(12): 66-68.
    WU Hu-cheng, ZHANG De-kun, LI Wei. Comparison of Tribological Behaviour of Silicon before and after C+-implantation[J]. Materials and Mechanical Engineering, 2007, 31(12): 66-68.
    Citation: WU Hu-cheng, ZHANG De-kun, LI Wei. Comparison of Tribological Behaviour of Silicon before and after C+-implantation[J]. Materials and Mechanical Engineering, 2007, 31(12): 66-68.

    碳离子注入前后单晶硅的摩擦性能对比

    Comparison of Tribological Behaviour of Silicon before and after C+-implantation

    • 摘要: 以不同剂量的碳离子注入得到不同单晶硅片试样,用原位纳米力学测试系统对其纳米硬度和弹性模量进行测定;在UMT-2型摩擦试验机上进行摩擦试验,用S-3000N型扫描电镜观察其磨损后的磨痕形貌.结果表明:碳离子注入后硅片的纳米硬度和弹性模量略高于注入前的单晶硅片,注入后硅片的减摩效果和耐磨性能在0.1~0.3 N载荷下得到了大幅度提高,当载荷增加后,摩擦因数迅速增加并产生磨损痕迹;离子注入前后单晶硅片的磨损机制近似,都以涂抹形貌为主,局部出现剥落现象.

       

      Abstract: The single crystal silicon wafer was implanted by carbon ion with different implantation doses.The changes of hardness and elastic modulus of silicon implanted by carbon ion were studied on the in-situ nano-mechanical testing system.The sliding tests on silicon wafer and the C+-implanted silicon wafer were performed on the UMT-2 Tribometer.The morphology of worn surface was observed with the S-3 000 N Scanning Electron Microscope.The nano-hardness and elastic modulus increase for the C+-implanted silicon wafer.Friction-reducing effect of the C+-implanted silicon wafer improve and its friction coefficient decrease to a great extent.Wear mechanisms of the single crystal silicon and silicon implanted by carbon ion are similar.

       

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