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    张云莲, 史美伦, 陈志源. 钢筋钝化膜半导体性能的Mott-Schottky研究[J]. 机械工程材料, 2006, 30(7): 7-10.
    引用本文: 张云莲, 史美伦, 陈志源. 钢筋钝化膜半导体性能的Mott-Schottky研究[J]. 机械工程材料, 2006, 30(7): 7-10.
    shu
    ZHANG Yun-lian, SHI Mei-lun, CHEN Zhi-yuan. Mott-Schottky Investigation of Passivation Film of Rebar in Simulated Concrete Pore Solution[J]. Materials and Mechanical Engineering, 2006, 30(7): 7-10.
    Citation: ZHANG Yun-lian, SHI Mei-lun, CHEN Zhi-yuan. Mott-Schottky Investigation of Passivation Film of Rebar in Simulated Concrete Pore Solution[J]. Materials and Mechanical Engineering, 2006, 30(7): 7-10.
    shu

    钢筋钝化膜半导体性能的Mott-Schottky研究

    Mott-Schottky Investigation of Passivation Film of Rebar in Simulated Concrete Pore Solution

      摘要
    • 摘要: 以饱和氢氧化钙溶液模拟混凝土孔隙液,运用Mott-Schottky(M-S)图来研究混凝土中钢筋钝化膜的半导体特性.试验表明:在电位-0.78~0.37 V(SCE)范围,混凝土中钢筋钝化膜的C-2SC-E关系呈M-S曲线,且斜率为正,表明钢筋钝化膜为n-型半导体, 其平带电位约为-0.85 V;钢筋钝化膜电容表现出的对测试频率的依赖性使M-S曲线呈频率弥散现象;体系中氯离子的增加(<0.2%)及钢筋电极在体系中浸泡时间的延长,均使钝化膜的施主密度增大.

       

      Abstract: The semiconducive properties of the passive film on rebar in simulated concrete pore solution were analyzed by Mott-Schottky (M-S) plots.The relation of C-2SC-E of rebar electrode showed linear M-S relationship and positive slope within -0.78-0.37 V(SCE),indicating the passivation film on rebar was n-type semiconductor.The capacitance values were frequency dependent and there was a strong dispersion of the M-S plots with frequency.With adding chloride ions in simulated concrete pore solution or prolonging the time of rebar electrode in system,the donor density of film increased.

       

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