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    邢金柱, 刘保亭, 霍骥川, 周阳, 李晓红, 李丽, 张湘义, 彭英才, 王侠. 磁控溅射法制备用作铜互连阻挡层的钛-铝薄膜[J]. 机械工程材料, 2009, 33(5): 83-86.
    引用本文: 邢金柱, 刘保亭, 霍骥川, 周阳, 李晓红, 李丽, 张湘义, 彭英才, 王侠. 磁控溅射法制备用作铜互连阻挡层的钛-铝薄膜[J]. 机械工程材料, 2009, 33(5): 83-86.
    shu
    XING Jin-zhu, LIU Bao-ting, HUO Ji-chuan, ZHOU Yang, LI Xiao-hong, LI Li, ZHANG Xiang-yi, PENG Ying-cai, WANG Xia. Ti-Al Film Used as Diffusion Barrier for Copper Interconnection Deposited by RF Magnetron Sputtering[J]. Materials and Mechanical Engineering, 2009, 33(5): 83-86.
    Citation: XING Jin-zhu, LIU Bao-ting, HUO Ji-chuan, ZHOU Yang, LI Xiao-hong, LI Li, ZHANG Xiang-yi, PENG Ying-cai, WANG Xia. Ti-Al Film Used as Diffusion Barrier for Copper Interconnection Deposited by RF Magnetron Sputtering[J]. Materials and Mechanical Engineering, 2009, 33(5): 83-86.
    shu

    磁控溅射法制备用作铜互连阻挡层的钛-铝薄膜

    Ti-Al Film Used as Diffusion Barrier for Copper Interconnection Deposited by RF Magnetron Sputtering

      摘要
    • 摘要: 采用射频磁控溅射法在Si(100)基片上首先沉积了厚度40 nm的非晶钛-铝薄膜,然后在其上又原位生长了厚度100 nm的铜薄膜,制备了铜膜/钛-铝膜/硅试样;对试样分别在400~800 ℃内进行真空退火处理,用原子力显微镜、X射线衍射仪、四探针测试仪对试样的表面形貌、结晶状态及方块电阻进行了分析.结果表明:当退火温度低于750 ℃时,试样表面平整,表面粗糙度和方块电阻均较小且基本不随退火温度的升高而改变,此时,非晶钛-铝薄膜能够起到阻挡铜向硅中扩散的作用;当退火温度在800 ℃时,试样的表面粗糙度和方块电阻急剧增大,此时,非晶钛-铝薄膜已经不能起到阻挡层的作用.

       

      Abstract: An amorphous Ti-Al film,on which Cu film was in situ prepared,was deposited on the Si (100) substrate by radio frequency (RF) magnetron sputtering to fabricate Cu(100 nm)/Ti-Al (40 nm)/Si samples.The samples were annealed in the temperature range from 400 ℃ to 800 ℃ in high vacuum and then characterized by atom force microscopy (AFM),X-ray diffraction (XRD),and four-point probe methods.The results show that,when the annealing temperature was below 750 ℃,the sample surface was smooth,and the surface root mean square roughness (Rms) and sheet resistance were smaller and did not change with the annealing temperature,and the amorphous Ti-Al film could prevent the interdiffusion between Cu and Si.However,for the sample annealed at 800 ℃,the surace root mean square roughness and sheet resistance increased dramatically,and Ti-Al film could not be used as an effective barrier anymore.

       

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