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    范莉, 刘平, 贾淑果, 陈少华, 于志生. 集成电路用铜-镍-硅合金的动态再结晶行为[J]. 机械工程材料, 2009, 33(6): 25-28.
    引用本文: 范莉, 刘平, 贾淑果, 陈少华, 于志生. 集成电路用铜-镍-硅合金的动态再结晶行为[J]. 机械工程材料, 2009, 33(6): 25-28.
    FAN Li, LIU Ping, JIA Shu-guo, CHEN Shao-hua, YU Zhi-sheng. Dynamic Recrystallization Behavior of Cu-Ni-Si Alloy for Integrated Circuit Materials[J]. Materials and Mechanical Engineering, 2009, 33(6): 25-28.
    Citation: FAN Li, LIU Ping, JIA Shu-guo, CHEN Shao-hua, YU Zhi-sheng. Dynamic Recrystallization Behavior of Cu-Ni-Si Alloy for Integrated Circuit Materials[J]. Materials and Mechanical Engineering, 2009, 33(6): 25-28.

    集成电路用铜-镍-硅合金的动态再结晶行为

    Dynamic Recrystallization Behavior of Cu-Ni-Si Alloy for Integrated Circuit Materials

    • 摘要: 用Gleeble-1500D热模拟试验机对铜-镍-硅合金在应变速率0.01~5 s-1、变形温度600~800 ℃压缩条件下的流变应力及其动态再结晶行为进行了研究.结果表明:应变速率和变形温度对合金的动态再结晶行为影响较大,变形温度越高,应变速率越小,合金越容易发生动态再结晶;利用Arrhenius双曲正弦函数求得铜-镍-硅合金的热变形激活能为245.4 kJ·mol-1;得到的Zener-Hollomon指数函数形式为=e28.47sinh(0.013σ)5.52exp-245.4×103/(RT).

       

      Abstract: The rheologic stress and dynamic recrystallization behaviors of Cu-Ni-Si alloy during hot compression deformation process were investigated in the temperature range of 600-800 ℃ and strain rate range of 0.01-5 s-1 using Gleeble-1500D thermal-mechanical simulator.The results show that the dynamic recrystallization behavior was controlled by both strain rate and deforming temperature.The higher the temperature and the smaller the strain rate,the easier the dynamic recrystallization.The hot deformation activation energy of the Cu-Ni-Si alloy was gained by Arrhenius hyperbolic sine function to be 245.4 kJ·mol-1.With a Zener-Hollomon parameter in the exponent-type equation,analytical formula of strain rate was got as =e28.47sinh(0.013σ)5.52exp-245.4×103/(RT).

       

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