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    王晓静, 邵红红, 王季. 射频磁控溅射法制备MoS2/SiC双层薄膜[J]. 机械工程材料, 2012, 36(2): 68-71.
    引用本文: 王晓静, 邵红红, 王季. 射频磁控溅射法制备MoS2/SiC双层薄膜[J]. 机械工程材料, 2012, 36(2): 68-71.
    WANG Xiao-jing, SHAO Hong-hong, WANG Ji. MoS2/SiC Double Films Prepared by Radio Frequency Magnetron Sputtering[J]. Materials and Mechanical Engineering, 2012, 36(2): 68-71.
    Citation: WANG Xiao-jing, SHAO Hong-hong, WANG Ji. MoS2/SiC Double Films Prepared by Radio Frequency Magnetron Sputtering[J]. Materials and Mechanical Engineering, 2012, 36(2): 68-71.

    射频磁控溅射法制备MoS2/SiC双层薄膜

    MoS2/SiC Double Films Prepared by Radio Frequency Magnetron Sputtering

    • 摘要: 采用射频磁控溅射法在室温、500 ℃的单晶硅和GCr15钢基体上制备了MoS2/SiC双层薄膜, 并借助X射线衍射仪、扫描电子显微镜、摩擦磨损试验机以及划痕仪等研究了薄膜的结构、形貌、成分、摩擦学性能以及薄膜与基体的结合力。结果表明: 当衬底温度为500 ℃时制备的MoS2/SiC双层薄膜表面致密平整, 两层薄膜之间界面平直, 膜厚约为0.8 μm; 该双层膜的摩擦因数低, 耐磨性好; 添加中间层可提高薄膜与基体的结合力。

       

      Abstract: The MoS2/SiC double films were prepared on single crystal silicon and GCr15 steel substrate, which temperature was room temperature and 500 ℃, by radio frequency magnetron sputtering method. The structure, morphology, components, tribological properties of the films and cohesion between film and substrate were studied by X-ray diffraction, scanning electron microscopy, friction and wear tester and scratch tester, respectively. The results show that the surface of MoS2/SiC double film prepared at substrate temperature of 500 ℃ was compact and flat, and the interface of two layer films was straight. The film exhibited excellent wear resistance and low friction coefficient. Adding interlayers could improve the cohesion between substrate and MoS2/SiC film.

       

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