碳离子注入对硅片微动磨损性能的影响
Influence of Carbon Ion Implantation on Fretting Wear of Silicon Wafers
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摘要: 对单晶硅片<111>进行了注入剂量为2×1016 ions·cm-2、注入能量分别为60 keV和80 keV的碳离子注入,采用X射线衍射仪研究了碳离子注入前后硅片晶体结构的变化,采用UMT-2型微动摩擦试验机进行了微动摩擦磨损试验,采用超高精度三维形貌仪测量了硅片的磨痕深度,采用S-3000N型扫描电子显微镜分析了硅片的磨损形貌及磨损机理.结果表明:碳离子注入改变了硅片的晶体结构,使晶体无序化;硅片的摩擦因数和磨痕深度均随着载荷、微动振幅的增加而增大;碳离子注入后硅片的减摩效果和抗磨性能得到明显改善,当载荷达到一定值后,随着时间的延长,碳离子注入层逐渐被磨破,摩擦因数迅速增大;注入能量为60 keV硅片的减摩抗磨性能较好;碳离子注入前后硅片的磨痕均呈椭圆形,注入后磨痕面积小且表面损伤程度较轻,磨损机制以磨粒磨损为主.Abstract: Single crystal silicon<111>wafer was implanted by carbon ions with the dose of 2×1016 ions·cm-2 and energy of 60 keV and 80 keV,respectively.Crystal structure changes of the silicon wafers before and after carbon ion(C+)-implantation were observed by X-ray diffractometer.Then the fretting wear tests were performed on a UMT-2 micro-tribometer,and the wear depth,wear morphology and the wear mechanism were analyzed with high-accuracy 3D profiler and S-3000N scanning electron microscopy.The results show that crystal structure of the silicon vafers was changed by C+-implantation which made the crystal disordered.The friction coefficient and wear depth of the silicon wafers increased with the increase of the load and fretting amplitude,and the friction-reducing effect and wear-resistance of the C+-implantation silicon wafers were obviously improved.When the load reached a certain value,carbon ion implanted layer was worn out gradually as the prolongation time,the friction coefficient increased rapidly.And the silicon wafers with energy of 60 keV had excellent friction-reducing and wear-resistance properties.The wear traces of the silicon wafers before and after C+-implantation were similar to ellipse,the wear area was small and degree of damnification was mild after inplantation.The main wear mechanism was abrasive wear.