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    许云书. 我国射线化学合成SiC纤维及相关材料的现状与展望[J]. 机械工程材料, 2012, 36(1): 1-6.
    引用本文: 许云书. 我国射线化学合成SiC纤维及相关材料的现状与展望[J]. 机械工程材料, 2012, 36(1): 1-6.
    XU Yun-shu. Present Status and Prospect of SiC Fibers and Related Materials Synthetized by Radiation Chemistry Method in China[J]. Materials and Mechanical Engineering, 2012, 36(1): 1-6.
    Citation: XU Yun-shu. Present Status and Prospect of SiC Fibers and Related Materials Synthetized by Radiation Chemistry Method in China[J]. Materials and Mechanical Engineering, 2012, 36(1): 1-6.

    我国射线化学合成SiC纤维及相关材料的现状与展望

    Present Status and Prospect of SiC Fibers and Related Materials Synthetized by Radiation Chemistry Method in China

    • 摘要: 传统CVD法合成的SiC纤维其最高使用温度仅有900 ℃, 氧化先驱丝法制备的SiC纤维也只能用于1 000 ℃以下。主要介绍了我国射线化学合成法制备耐高温抗氧化的SiC纤维(使用温度高于1 600 ℃, 单丝抗拉强度达2.2~2.7 GPa)的系列关键技术, 及其基于这些技术制备圆形截面管状SiC纤维(外径为10~15 μm, 壁厚2~3 μm)的技术; 同时也简介了射线化学应用于纳米微孔SiC功能陶瓷以及SiCf/SiC陶瓷基复合材料等方面的研究进展。

       

      Abstract: The maximum working temperature of SiC fibers synthetized by traditional CVD method is only about 900 ℃, the SiC fibers fabricated through oxidation precursor silk can only be used below 1 000 ℃. A series of key technologies for fabricating high temperature and oxidation resistant SiC fibers through radiation chemistry synthesis method in our country are introduced, and the fibers′ working temperatures are above 1 600 ℃, tensile strength are 2.2-2.7 GPa. Based on these technologies, circular cross-section tubular SiC fibers (outer diameter 10-15 μm, wall thickness 2-3 μm) were prepared; The reasearch progess of nano-pored SiC functional ceramics and SiCf/SiC ceramic matrix composites are also introduced briefly.

       

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