高级检索
    王富强, 闫联生, 郝志彪, 崔红. 用催化化学气相沉积工艺在C/C-SiC复合材料表面原位制备SiC晶须[J]. 机械工程材料, 2011, 35(10): 98-102.
    引用本文: 王富强, 闫联生, 郝志彪, 崔红. 用催化化学气相沉积工艺在C/C-SiC复合材料表面原位制备SiC晶须[J]. 机械工程材料, 2011, 35(10): 98-102.
    shu
    WANG Fu-qiang, YAN Lian-sheng, HAO Zhi-biao, CUI Hong. In-situ Preparation of SiC Whiskers on C/C-SiC Composite Surface by Catalytic Chemical Vapor Deposition[J]. Materials and Mechanical Engineering, 2011, 35(10): 98-102.
    Citation: WANG Fu-qiang, YAN Lian-sheng, HAO Zhi-biao, CUI Hong. In-situ Preparation of SiC Whiskers on C/C-SiC Composite Surface by Catalytic Chemical Vapor Deposition[J]. Materials and Mechanical Engineering, 2011, 35(10): 98-102.
    shu

    用催化化学气相沉积工艺在C/C-SiC复合材料表面原位制备SiC晶须

    In-situ Preparation of SiC Whiskers on C/C-SiC Composite Surface by Catalytic Chemical Vapor Deposition

      摘要
    • 摘要: 以甲基三氯硅烷为原料, FeCl3或Ni(NO3)2为催化剂, 采用催化化学气相沉积工艺, 在C/C-SiC复合材料表面原位制备出SiC晶须; 研究了温度、催化剂对制备SiC晶须的影响。结果表明: 1 050 ℃为制备SiC晶须的最佳温度; FeCl3催化生长的SiC晶须较细, 直径为1.5～1.8 μm, 晶须表面光滑, 直晶率高; Ni(NO3)2催化制备的SiC晶须较粗, 直径为2.0～2.5 μm, 晶须表面粗糙, 晶须交互生长, 弯晶率高; 晶须生长机理为气液固(VLS)机理。

       

      Abstract: Taking methyl trichlorosilane as raw material, FeCl3 or Ni(NO3)2 as catalyst, the SiC whiskers were prepared on C/C-SiC composite surface by catalytic chemical vapor deposition process. The influences of temperature and catalyst on preparation of SiC whiskers were studied. The results show that 1 050 ℃ was the optimum temperature to preparation whisker. The surface of the whisker was smooth, the diameter was 1.5-1.8 μm, and straight whiskers ratio was high when the catalyst was FeCl3 solution. While the surface of the whisker was rough, the diameter was 2.0-2.5 μm, and curving whiskers ratio was high when the catalyst was Ni(NO3)2 solution. The SiC whiskers grew via vapor-liquid-solid (VLS) mechanism.

       

      • HTML全文
      • 参考文献(15)
      • 相关文章
      • 施引文献
    • 资源附件(0)

    /

    返回文章
    返回