高纯Ti3SiC2的合成及其反应机理
Synthesis and Reaction Mechanism of High-Purity Ti3SiC2
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摘要: 在不添加任何反应助剂的情况下, 探索采用不同的原料体系用真空固相反应方法制备高纯度Ti3SiC2; 用X射线衍射仪研究了合成工艺条件对粉体纯度的影响, 并对其反应过程和反应机理进行了探讨。结果表明: 以TiH2、硅粉和TiC粉为原料, 可合成得到高纯度Ti3SiC2粉体, 纯度均在90%以上, 最高可达98.64%; TiH2、硅粉、TiC粉体的物质的量比为1∶1.25∶1.9时在1 400 ℃时可合成纯度较高的Ti3SiC2, 在1 500 ℃时Ti3SiC2开始分解。Abstract: Different raw material system were adopted to synthesize high purity Ti3SiC2 without any reaction additives by vaccum solid reaction. The effect of synthesis conditions on powder′s purity was studied by X-ray diffractometer and the reaction process and mechanisms were also discussed. The results show that high-purity Ti3SiC2 could be synthesized by taking TiH2, Si and TiC powders as raw materials, and the purity of Ti3SiC2 was all higher than 90% and the highest purity could reach to 98.64%. The higher purity Ti3SiC2 could be synthesize at 1 400 ℃ when the ratio of TiH2, Si and TiC powders was 1∶1.25∶1.9, and the Ti3SiC2 started to decomposed at 1 500 ℃.
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