V2O5掺杂对ZnNb2O6介质陶瓷性能的影响

V₂O₅掺杂对ZnNb₂O₆介质陶瓷性能的影响

基金项目:

教育部留学归国人员基金资助项目(2003-14)

河南省高校创新人才基金资助项目(2001-213)

详细信息

摘要: 采用传统的固相反应法制备了V2O5掺杂ZnNb2O6介质陶瓷,借助XRD、SEM和LCR测试仪等研究了陶瓷的烧结特性及介电性能.结果表明:V2O5掺杂能有效地降低ZnNb2O6陶瓷的烧结温度,提高介电常数,改善频率温度系数,但介电损耗有所增加.经1 050 ℃烧结,1.0%V2O5掺杂的ZnNb2O6陶瓷具有较好的介电性能,εr=28,tan δ=0.000 6,τf=-42.50×10-6 ℃-1.
- V2O5 /
- 介质陶瓷 /
- 烧结温度 /
- 介电性能
Abstract: ZnNb2O6 dielectric ceramics doped with V2O5 were prepared by conventional mixed solid method.Their microstructure was analyzed by XRD,SEM and their dielectric properties were also determined by LCR testing analyzer.The effect of V2O5 on the sinterability and dielectric properties of ZnNb2O6 ceramics was studied.ZnNb2O6 ceramics with low sintering temperature,high dielectric constant and suitable temperature coefficient of resonant frequency were obtained due to the addition of V2O5.However,slightly higher dielectric loss values appeared in the V2O5-doped ZnNb2O6 ceramics.The 1.0% V2O5-doped ZnNb2O6 ceramics sintered at 1 050 ℃ had the optimum dielectric properties,εr=28,tanδ=0.000 6 and τf=-42.50×10-6 ℃-1.
- V2O5 /
- dielectric ceramic /
- sintering temperature /
- dielectric property

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