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    王超, 吕振林, 周永欣, 张姗姗. 反应烧结制备Ti3SiC2材料[J]. 机械工程材料, 2008, 32(5): 38-40.
    引用本文: 王超, 吕振林, 周永欣, 张姗姗. 反应烧结制备Ti3SiC2材料[J]. 机械工程材料, 2008, 32(5): 38-40.
    shu
    WANG Chao, Lv Zhen-lin, ZHOU Yong-xin, ZHANG Shan-shan. Preparation of Ti3SiC2 by Reaction Sintering[J]. Materials and Mechanical Engineering, 2008, 32(5): 38-40.
    Citation: WANG Chao, Lv Zhen-lin, ZHOU Yong-xin, ZHANG Shan-shan. Preparation of Ti3SiC2 by Reaction Sintering[J]. Materials and Mechanical Engineering, 2008, 32(5): 38-40.
    shu

    反应烧结制备Ti3SiC2材料

    Preparation of Ti3SiC2 by Reaction Sintering

      摘要
    • 摘要: 分别以粉末钛、硅、石墨和钛、碳化硅、石墨为原料,采用反应烧结工艺制备Ti3SiC2材料.结果表明:当以钛、硅、石墨单质粉料为原料时,在1 200～1 400 ℃温度范围内能够合成出高纯度的Ti3SiC2块体材料,且其纯度随着硅含量的增加而提高;当原料摩尔比为3∶1.3∶2和3∶1.4∶2时,该材料中只有Ti3SiC2相而无其他相存在;而以钛、碳化硅、石墨粉末为原料时,在1 200～1 400 ℃温度范围内很难合成出高纯度的Ti3SiC2块体材料.

       

      Abstract: The Ti3SiC2 ceramic material was prepared by reaction sintering processing from Ti,Si,C and Ti,SiC,C powders,respectively.When elemental powders were used,the Ti3SiC2 of high purity was successfully prepared by reaction sintering in the temperature range of 1 200-1 400 ℃.When the addition of Si with a proper amount increased,the purity of Ti3SiC2 was improved.Sintered samples with the morlar ration of Ti∶Si∶C=3∶x∶2 (where x = 1.3,1.4) only had Ti3SiC2 phase.When Ti,SiC,C were used as raw materials,it was difficult to prepare pure Ti3SiC2 material.

       

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