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    陈向阳, 张瑾, 胡海霞, 周哲波. 反应磁控溅射方法制备CNx薄膜的高温抗氧化性能[J]. 机械工程材料, 2014, 38(5): 71-75.
    引用本文: 陈向阳, 张瑾, 胡海霞, 周哲波. 反应磁控溅射方法制备CNx薄膜的高温抗氧化性能[J]. 机械工程材料, 2014, 38(5): 71-75.
    shu
    CHEN Xiang-yang, ZHANG Jin, HU Hai-xia, ZHOU Zhe-bo. High Temperature Oxidation Resistance of CNx Thin Films Prepared by Reactive Magnetron Sputtering[J]. Materials and Mechanical Engineering, 2014, 38(5): 71-75.
    Citation: CHEN Xiang-yang, ZHANG Jin, HU Hai-xia, ZHOU Zhe-bo. High Temperature Oxidation Resistance of CNx Thin Films Prepared by Reactive Magnetron Sputtering[J]. Materials and Mechanical Engineering, 2014, 38(5): 71-75.
    shu

    反应磁控溅射方法制备CNx薄膜的高温抗氧化性能

    High Temperature Oxidation Resistance of CNx Thin Films Prepared by Reactive Magnetron Sputtering

      摘要
    • 摘要: 采用反应磁控溅射方法在高速钢基体上制备了CNx薄膜, 通过改变氮气和氩气的流量比来调整CNx薄膜中的氮含量, 并采用XRD、HR-TEM、SEM、FTIR和显微硬度计等对薄膜的结构及其在300, 400, 500, 600 ℃下的高温抗氧化性能进行了表征。结果表明: CNx薄膜在400 ℃以下具有较好的抗氧化性能, 当氧化温度达到500 ℃后薄膜会发生严重氧化和分解; CNx薄膜中氮含量的增加有利于改善薄膜的高温抗氧化性能。

       

      Abstract: CNx thin films were deposited on high speed steel (HSS) substrates by reactive magnetron sputtering (RMS), and nitrogen content in the thin films was adjusted by changing the flow ratio of N2 to Ar. The structure of the film and its high temperature oxidation resistance at 300, 400, 500, 600 ℃ was studied by XRD, HR-TEM, SEM and FTIR. The results indicate that the CNx thin films had good oxidation resistance at below 400 ℃, and oxidation annealing temperature of 500 ℃ led to serious oxidation or decomposition. Higher nitrogen content was helpful to high temperature oxidation resistance of the CNx thin films.

       

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