Effect of Ba Doping Concentration on Electric Properties of La-doped Pb(Zr,Sn,Ti) O₃ Ceramics

Pb_0.97-xLa_0.02Ba_xZr_0.55Sn_0.38Ti_0.07O₃ (x=0, 0.09, 0.11, 0.13, mole fraction) antiferroelectric ceramics were synthesized by conventional solid state reaction method, and then the effects of Ba doping concentration on the microstructure, dielectric property and energy storage property of the ceramics were studied. The results show that Ba was capable of diffusing into the ceramic lattices to form a perovskite structure. With the increase of the Ba doping concentration, the antiferroelectric-paraelectric phase transition temperature of the ceramics decreased while the dielectric permittivity increased. The energy storage density of the ceramics at 5.4 kV·mm^-1 reached 0.7 J·cm^-3 with x value of 0.09. The applied electric field intensity was lower than that reported in literatures, indicating that the doped Ba can decrease the applied electric field intensity. The relationship between Ba doping concentration and the energy storage property of the ceramics was linear.