Oxidation Resistance of Graphene Film Prepared by Different Methods on Copper Surface

Graphene film was prepared on surface of copper foil substrate by oxidation-reduction method,chemical vapor deposition(CVD) method and the combination of both methods and applied oxidation process. The surface morphology, phase composition and oxidation rate of different samples before and after oxidation were compared and the oxidation resistance of different graphene film was studied. The results show that CuO and Cu₂O were found on the surface of Cu sample, Cu+r-GO sample and Cu+GP sample after oxidation. There was not any oxide on the surface of Cu+GP/r-GO sample. During the same oxidation time, Cu sample had the maximum oxidation rate and oxidation rate of Cu+r-GO sample was greater than that of Cu+GP sample. Cu+GP/r-GO sample was almost not oxidized. GP/r-GO film had the best oxidation resistance.