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LI Shasha, ZHANG Ganghua, ZENG Tao. Research Progress on Structure Phase Transition and Physical Properties of Photoelectric Materials Under High-Pressure[J]. Materials and Mechanical Engineering, 2018, 42(6): 1-6. DOI: 10.11973/jxgccl201806001
Citation: LI Shasha, ZHANG Ganghua, ZENG Tao. Research Progress on Structure Phase Transition and Physical Properties of Photoelectric Materials Under High-Pressure[J]. Materials and Mechanical Engineering, 2018, 42(6): 1-6. DOI: 10.11973/jxgccl201806001
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Research Progress on Structure Phase Transition and Physical Properties of Photoelectric Materials Under High-Pressure

  • Shanghai Key Laboratory of Engineering Materials Application and Evaluation, Shanghai Research Institute of Materials, Shanghai 200437, China

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  • Received Date: April 27, 2018
  • Revised Date: May 11, 2018
    Graphical Abstract
    • Abstract
  • High-pressure technique can efficiently tune the crystal lattice and electronic state of photoelectric materials. It is a feasible route to adjust physical properties of photoelectric materials, and an important method for synthesizing new photoelectric materials. A review of the high-pressure research progress on photoelectric materials is summarized. The effects of high-pressure condition on the crystal structure, electronic configuration and physical properties of photoelectric materials are described. The mechanism of enhancing light absorption, conductivity and photoelectric performance is analyzed. The intrinsic relation between the pressure-induced structural phase transition and physical properties is discussed. The development possibility of the high-pressure research on photoelectric materials is in prospect.
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    • References (40)
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