Preparation and Electric Property of 0.1HoMnO<sub>3</sub>-0.9BiFeO<sub>3</sub> Flexible Ferroelectric Thin Film

WANG Jianye; WANG Yiping; YANG Ying; SHENG Yun

doi:10.11973/jxgccl201902005

Materials and Mechanical Engineering > 2019 > 43(2): 23-27. > DOI: 10.11973/jxgccl201902005

WANG Jianye, WANG Yiping, YANG Ying, SHENG Yun. Preparation and Electric Property of 0.1HoMnO₃-0.9BiFeO₃ Flexible Ferroelectric Thin Film[J]. Materials and Mechanical Engineering, 2019, 43(2): 23-27. DOI: 10.11973/jxgccl201902005

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Preparation and Electric Property of 0.1HoMnO₃-0.9BiFeO₃ Flexible Ferroelectric Thin Film

1. College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China;
2. State Key Laboratory of Mechanics and Control of Mechanical Structures, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China

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Received Date: December 15, 2017
Revised Date: January 03, 2019

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Abstract

Thin film of 0.1HoMnO₃-0.9BiFeO₃ was deposited on flexible mica substrate by pulsed laser deposition. The crystal structure, surface appearance, bending service characteristic, ferroelectric and dielectric properties and carriage property of the film were studied. The results show that BiFeO₃ grew along the (012) and (104) crystal planes and had good crystallization. The film presented a smooth surface with root mean square surface roughness of 6.7 nm. After continuously bending and flatting for 10 000 times, the film surface showed no microcracks. The film illustrated a good micro piezoelectricity and a certain upward spontaneous polarization. The saturated and remanent polarization of the film were 68, 61 μC·cm^-2, respectively. The polarization changed little after bending to curvature radius of 2.2 mm, whereas decreased slightly after continuously bending and flatting for 10 000 times; the dielectric properties in flatting and bending states had little difference. The activation energy of the film was 0.42 eV, which was lower than that of pure BiFeO₃ film, indicating an increased carrier transport capacity.
- flexible thin film,
- BiFeO₃,
- HoMnO₃,
- dielectric property,
- piezoelectricity,
- ferroelectricity

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Preparation and Electric Property of 0.1HoMnO3-0.9BiFeO3 Flexible Ferroelectric Thin Film

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Preparation and Electric Property of 0.1HoMnO₃-0.9BiFeO₃ Flexible Ferroelectric Thin Film