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    WANG Xiaobo, HE Zhiyong, WANG Feng, ZHANG Qifu. Research Progress on Preparation Technology of Silicon CarbideCeramics with Complex Structure[J]. Materials and Mechanical Engineering, 2021, 45(7): 1-6,34. DOI: 10.11973/jxgccl202107001
    Citation: WANG Xiaobo, HE Zhiyong, WANG Feng, ZHANG Qifu. Research Progress on Preparation Technology of Silicon CarbideCeramics with Complex Structure[J]. Materials and Mechanical Engineering, 2021, 45(7): 1-6,34. DOI: 10.11973/jxgccl202107001

    Research Progress on Preparation Technology of Silicon CarbideCeramics with Complex Structure

    • Silicon carbide ceramic has high strength and thermal conductivity, and good chemical stability, and is widely used in aerospace, petrochemical, integrated circuits and other fields; however, defects are easy to form in the silicon carbide ceramic during processing because of its high hardness and brittleness, which restricts the application of silicon carbide ceramic with complex structures. The preparation processes of silicon carbide ceramic with complex structures are described, and the advantages and disadvantages of the commonly used preparation technologies, such as cold isostatic pressing combined with pressure-free sintering, gel injection molding combined with reactive sintering, slip casting combined with reactive sintering, 3D printing combined with reactive sintering, are analyzed in order to provide a certain theoretical reference for the preparation of silicon carbide ceramic with complex structures.
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