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    WANG Xiaobo, WANG Feng, HE Zhiyong, ZHANG Qifu. Research Progress on High Thermal Conductivity SiC Ceramics[J]. Materials and Mechanical Engineering, 2021, 45(9): 8-12. DOI: 10.11973/jxgccl202109002
    Citation: WANG Xiaobo, WANG Feng, HE Zhiyong, ZHANG Qifu. Research Progress on High Thermal Conductivity SiC Ceramics[J]. Materials and Mechanical Engineering, 2021, 45(9): 8-12. DOI: 10.11973/jxgccl202109002

    Research Progress on High Thermal Conductivity SiC Ceramics

    • In recent years, the rapid development of integrated circuit, heat exchanger, semiconductor industry has put forward higher requirements for the thermal conductivity of SiC ceramics. The thermal conductivity at room temperature of SiC ceramics is much lower than the theoretical value of single crystal SiC because of the defects such as lattice oxygen, grain boundary and porosity. The effects of additives and sintering process on the thermal conductivity at room temperature of SiC ceramics are reviewed. The future development direction of high thermal conductivity SiC ceramics is prospected.
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