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HAO Yachao, ZHAO Hongfeng, XIE Qingyun. Effect of Cr2O3 Doping Amount on Microstructure and Electrical Properties of SnO2 Varistor[J]. Materials and Mechanical Engineering, 2024, 48(1): 74-78. DOI: 10.11973/jxgccl202401012
Citation: HAO Yachao, ZHAO Hongfeng, XIE Qingyun. Effect of Cr2O3 Doping Amount on Microstructure and Electrical Properties of SnO2 Varistor[J]. Materials and Mechanical Engineering, 2024, 48(1): 74-78. DOI: 10.11973/jxgccl202401012

Effect of Cr2O3 Doping Amount on Microstructure and Electrical Properties of SnO2 Varistor

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  • Received Date: August 20, 2022
  • Revised Date: August 14, 2023
  • With SnO2 powder, CuO powder, Nb2O5 powder and Cr2O3 powder as raw materials,(98.95-x)SnO2-1CuO-0.05Nb2O5-xCr2O3x=0, 0.01, 0.02, 0.03, 0.05, mole fraction/%)varistor was prepared by powder metallurgy technique. The effect of Cr2O3 doping amount on the microstructure and electrical properties of the varistor was studied. The results show that with the increase of Cr2O3 doping amount, the relative density, shrinkage rate and average grain size of sintering samples first increased and then decreased. When the Cr2O3 mole fraction was 0.02%, the relative density and shrinkage rate of sintering sample were both the highest. When the Cr2O3 mole fraction was 0.01%, the grain size was the largest and the particle size distribution was the most uniform. With the increase of Cr2O3 doping amount, the voltage gradient of SnO2 varistor increased, the leakage current density decreased first and then increased, and the nonlinear coefficient increased first and then decreased. When the mole fraction of Cr2O3 was 0.02%, the leakage current density was the smallest, the nonlinear coefficient was the largest, and the voltage gradient was high, indicating the best comprehensive electrical performance.

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