Electrical Properties and Temperature Stability of Cr₂O₃ Doped BS-PMS-PZT High-Power Piezoelectric Ceramics

0.05BiScO₃-0.05Pb(Mn_1/3Sb_2/3)O₃-0.9Pb(Zr_0.45Ti_0.55)O₃ ceramics doped with different atomic fractions (0–0.8%) of Cr₂O₃ were prepared by solid-phase sintering method. The effects of Cr₂O₃ doping amounts on the microstructure, electrical property and temperature stability of the ceramics were investigated. The results show that the ceramics with different Cr₂O₃ doping amounts all had perovskite structures and no impurity was detected. With the increase of Cr₂O₃ doping amount, the tripartite phase gradually appeared and its amount intensity increased, the tetragonal phase amount decreased slightly, the average grain size continuously increased, and the relative density increased first and then decreased. With the increase of Cr₂O₃ doping amount, the piezoelectric constant and mechanical quality factor of the ceramics both increased and then decreased, the dielectric loss increased, the electromechanical coupling coefficient basically increased and then decreased, and the Curie temperature decreased. When the atomic fraction of Cr₂O₃ was 0.4%, the comprehensive electrical properties of ceramics were the best, and the temperature stability was good. From room temperature to 260 °C, the decreasing rate of piezoelectric constant of the ceramics with 0.4% atomic fraction of Cr₂O₃ was 32%, which was lower than that of DM-8 commercial PZT-8 modified piezoelectric ceramics (53%).