Effects of Ternary Carbide of Al<sub>4</sub>SiC<sub>4</sub> on Pressureless Sintering of β-SiC

ZHOU Shi-min; YU Chao; ZHU Hong-xi; YUAN Wen-jie; DENG Cheng-ji; BAI Chen

Materials and Mechanical Engineering > 2015 > 39(2): 45-49.

ZHOU Shi-min, YU Chao, ZHU Hong-xi, YUAN Wen-jie, DENG Cheng-ji, BAI Chen. Effects of Ternary Carbide of Al₄SiC₄ on Pressureless Sintering of β-SiC[J]. Materials and Mechanical Engineering, 2015, 39(2): 45-49.

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Effects of Ternary Carbide of Al₄SiC₄ on Pressureless Sintering of β-SiC

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Received Date: November 20, 2014

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Phase analysis,relative density testing and microstructure observation were used to study the effects of ternary carbide of Al4SiC4 as a sintering aid on pressureless sintering of β-SiC at different sintering temperatures.The results show that Al4SiC4 decomposed and produced Al during sintering process at high temperature.Al atoms entered into β-SiC crystal lattice,which could promote the transformation of β-SiC to α-SiC.With the increase of sintering temperature,the relative density of sintered samples increased.With the increase of Al4SiC4 amount,the relative density of sintered samples first increased then decreased.The sintered sample had a most compact structure with maximum relative density when the amount of Al4SiC4 was 5wt% and sintering temperature was 1 900 ℃.
- Al4SiC4,
- SiC,
- pressureless sintering,
- crystal transformation

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Effects of Ternary Carbide of Al₄SiC₄ on Pressureless Sintering of β-SiC