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    ZHOU Shi-min, YU Chao, ZHU Hong-xi, YUAN Wen-jie, DENG Cheng-ji, BAI Chen. Effects of Ternary Carbide of Al4SiC4 on Pressureless Sintering of β-SiC[J]. Materials and Mechanical Engineering, 2015, 39(2): 45-49.
    Citation: ZHOU Shi-min, YU Chao, ZHU Hong-xi, YUAN Wen-jie, DENG Cheng-ji, BAI Chen. Effects of Ternary Carbide of Al4SiC4 on Pressureless Sintering of β-SiC[J]. Materials and Mechanical Engineering, 2015, 39(2): 45-49.

    Effects of Ternary Carbide of Al4SiC4 on Pressureless Sintering of β-SiC

    • Phase analysis,relative density testing and microstructure observation were used to study the effects of ternary carbide of Al4SiC4 as a sintering aid on pressureless sintering of β-SiC at different sintering temperatures.The results show that Al4SiC4 decomposed and produced Al during sintering process at high temperature.Al atoms entered into β-SiC crystal lattice,which could promote the transformation of β-SiC to α-SiC.With the increase of sintering temperature,the relative density of sintered samples increased.With the increase of Al4SiC4 amount,the relative density of sintered samples first increased then decreased.The sintered sample had a most compact structure with maximum relative density when the amount of Al4SiC4 was 5wt% and sintering temperature was 1 900 ℃.
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