Properties of ZrW2O8 Thin Films Prepared by Radio Frequency Magnetron Sputtering

Amorphous ZrW2O8 thin films were deposited on quartz and single crystal silicon substrates by using radio frequency magnetron sputtering.The as-deposited films were characterized using XRD after heat treatment at different temperatures and the surface morphology of thin films were characterized by scanning electron microscopy (SEM).The dielectric property and light transmittance of ZrW2O8 thin films were investigated using impedance analyzer and spectrophotometer respectively.The results indicate that ZrW2O8 thin films with negative thermal expansion property can be presented after annealing at 740 ℃ for three minutes.The calculated thermal expansion coefficient of ZrW2O8 thin films is -2.54×10-5/℃.The dielectric constant and dielectric loss at high frequency reduced with the increase of frequency.The light transmittance reaches about 75% in the visible range.