A Contrast of Crystalline Silicon Thin Films Prepared by Solid Phase Crystallization and Excimer Laser Annealing

For preparating of high-quality crystalline silicon thin film, plasma enhanced chemical vapor deposition (PECVD) technology was used to grow amorphous silicon(α-Si) thin film on the glass substrate, and then, crystalline silicon (nc-Si) thin films were obtained respectively by solid phase crystallization (SPC) and excimer laser crystallization (ELA). The crystallization ratio, crystalline quality and surface morphology of two kinds of crystalline silicon thin films were evaluated by Raman spectrometer, X-ray diffraction and scan electron microscopy. The results show that, the crystallization ratio of the crystalline silicon thin film prepared by solid phase crystallization was about 70%;and it was up to 90% that by excimer laser crystallization. For the crystalline silicon thin films prepared by two different ways, their crystallization ratios were almost stable when changing the laser Raman test conditions. The crystalline silicon films prepared by ELA exhibited weak Si(111) peak, and possessed large grains size and regular grain boundaries.