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    FAN Li, LIU Ping, JIA Shu-guo, CHEN Shao-hua, YU Zhi-sheng. Dynamic Recrystallization Behavior of Cu-Ni-Si Alloy for Integrated Circuit Materials[J]. Materials and Mechanical Engineering, 2009, 33(6): 25-28.
    Citation: FAN Li, LIU Ping, JIA Shu-guo, CHEN Shao-hua, YU Zhi-sheng. Dynamic Recrystallization Behavior of Cu-Ni-Si Alloy for Integrated Circuit Materials[J]. Materials and Mechanical Engineering, 2009, 33(6): 25-28.

    Dynamic Recrystallization Behavior of Cu-Ni-Si Alloy for Integrated Circuit Materials

    • The rheologic stress and dynamic recrystallization behaviors of Cu-Ni-Si alloy during hot compression deformation process were investigated in the temperature range of 600-800 ℃ and strain rate range of 0.01-5 s-1 using Gleeble-1500D thermal-mechanical simulator.The results show that the dynamic recrystallization behavior was controlled by both strain rate and deforming temperature.The higher the temperature and the smaller the strain rate,the easier the dynamic recrystallization.The hot deformation activation energy of the Cu-Ni-Si alloy was gained by Arrhenius hyperbolic sine function to be 245.4 kJ·mol-1.With a Zener-Hollomon parameter in the exponent-type equation,analytical formula of strain rate was got as =e28.47sinh(0.013σ)5.52exp-245.4×103/(RT).
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