MoS₂/SiC Double Films Prepared by Radio Frequency Magnetron Sputtering

The MoS2/SiC double films were prepared on single crystal silicon and GCr15 steel substrate, which temperature was room temperature and 500 ℃, by radio frequency magnetron sputtering method. The structure, morphology, components, tribological properties of the films and cohesion between film and substrate were studied by X-ray diffraction, scanning electron microscopy, friction and wear tester and scratch tester, respectively. The results show that the surface of MoS2/SiC double film prepared at substrate temperature of 500 ℃ was compact and flat, and the interface of two layer films was straight. The film exhibited excellent wear resistance and low friction coefficient. Adding interlayers could improve the cohesion between substrate and MoS2/SiC film.