Present Status and Prospect of SiC Fibers and Related Materials Synthetized by Radiation Chemistry Method in China

The maximum working temperature of SiC fibers synthetized by traditional CVD method is only about 900 ℃, the SiC fibers fabricated through oxidation precursor silk can only be used below 1 000 ℃. A series of key technologies for fabricating high temperature and oxidation resistant SiC fibers through radiation chemistry synthesis method in our country are introduced, and the fibers′ working temperatures are above 1 600 ℃, tensile strength are 2.2-2.7 GPa. Based on these technologies, circular cross-section tubular SiC fibers (outer diameter 10-15 μm, wall thickness 2-3 μm) were prepared; The reasearch progess of nano-pored SiC functional ceramics and SiCf/SiC ceramic matrix composites are also introduced briefly.