In-situ Preparation of SiC Whiskers on C/C-SiC Composite Surface by Catalytic Chemical Vapor Deposition

Taking methyl trichlorosilane as raw material, FeCl3 or Ni(NO3)2 as catalyst, the SiC whiskers were prepared on C/C-SiC composite surface by catalytic chemical vapor deposition process. The influences of temperature and catalyst on preparation of SiC whiskers were studied. The results show that 1 050 ℃ was the optimum temperature to preparation whisker. The surface of the whisker was smooth, the diameter was 1.5-1.8 μm, and straight whiskers ratio was high when the catalyst was FeCl3 solution. While the surface of the whisker was rough, the diameter was 2.0-2.5 μm, and curving whiskers ratio was high when the catalyst was Ni(NO3)2 solution. The SiC whiskers grew via vapor-liquid-solid (VLS) mechanism.