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    MA Wen-liang, LIU Bao-ting, WANG Kuan-mao, BIAN Fang, LI Xiao-hong, ZHAO Qing-xun. Structure of Si-Base BiFe0.95Mn0.05O3/Pb(Zr0.4Ti0.6)O3/BiFe0.95Mn0.05O3 Integrated Thin Film and Its Platinum Electrode Capacitor Properties[J]. Materials and Mechanical Engineering, 2010, 34(4): 42-46.
    Citation: MA Wen-liang, LIU Bao-ting, WANG Kuan-mao, BIAN Fang, LI Xiao-hong, ZHAO Qing-xun. Structure of Si-Base BiFe0.95Mn0.05O3/Pb(Zr0.4Ti0.6)O3/BiFe0.95Mn0.05O3 Integrated Thin Film and Its Platinum Electrode Capacitor Properties[J]. Materials and Mechanical Engineering, 2010, 34(4): 42-46.

    Structure of Si-Base BiFe0.95Mn0.05O3/Pb(Zr0.4Ti0.6)O3/BiFe0.95Mn0.05O3 Integrated Thin Film and Its Platinum Electrode Capacitor Properties

    • BiFe0.95Mn0.05O3/Pb(Zr0.4Ti0.6)O3/BiFe0.95Mn0.05O3(BFMO/PZT/BFMO) integrated thin film was fabricated on Pt/Ti/SiO2/Si(001) substrates via sol-gel method.The phase structure of the film was analyzed by XRD,and the properties of the ferroelectric capacitor composed of the film and platinum electrode were investigated by ferroelectric tester.The results show that the crystallinity of the film was relatively good.There were no diffraction peaks but BFMO,PZT and Si substrate.When the electric field intensity was 0.7 MV·cm-1,the hysteresis loop of Pt/BFMO/PZT/BFMO/Pt capacitor had good symmetry,the residual electric polarization and coercivity were 17.9 μC·cm-2 and 0.12 MV·cm-1,respectively.Leakage current density of the capacitor was 2×10-5 A·cm-2 when the electric field intensity was 0.4 MV·cm-1.No obvious fatigue of the ferroelectric capacitor was observed after 1 010 switching cycles.
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