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LI Ying-wei, LIN Chun-fang, ZHOU Xiao, ZHU Xing-wen. Structural and Electrical Properties of Na+-doped ZnO Thin Films[J]. Materials and Mechanical Engineering, 2007, 31(8): 15-18.
Citation: LI Ying-wei, LIN Chun-fang, ZHOU Xiao, ZHU Xing-wen. Structural and Electrical Properties of Na+-doped ZnO Thin Films[J]. Materials and Mechanical Engineering, 2007, 31(8): 15-18.

Structural and Electrical Properties of Na+-doped ZnO Thin Films

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  • Received Date: December 28, 2006
  • Na+-doped ZnO thin films were prepared on Si〈100〉 substrate by sol-gel method using zinc acetate and sodium carbonate as starting materials,the doping amount is 0,0.018,0.036,0.045,0.063 and 0.090 mol/L,respectively.The phase structural characteristics and electrical properties,including the cell size of ZnO lattice,the conducting type as well as the Raman shift,of the so-obtained films were investigated by XRD,SEM,Raman scattering analysis and four-point probe van der Pauw method.The results showed that Na+ can occupy the Zn2+ sites of ZnO lattice,leading to the enlargement of ZnO cell.After doping Na+,the conductive type of ZnO films changed to p from n-type,and the resistivity,Hall mobility,and the hole concentration of the film with 0.045 mol/L Na+ were 75.7 Ω·cm and 2.955×1017/cm3,respectively.
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