Citation: | JIANG Yan, ZHU Ou, ZHANG Lan-ting, YU Jin-xing, WU Jian-sheng. (Mo0.85Nb0.15)Si2 Single Phase Single Crystal Prepared by Photothermal Floating Zone Melting Method[J]. Materials and Mechanical Engineering, 2010, 34(1): 38-40. |
[1] |
SAKIDJ A R,PEREPEZKO J H,KIM S,et al.Phase stability and structural defects in high-temperature Mo-Si-B alloys[J].Acta Materialia,2008,56(18):5223-5244.
|
[2] |
TANG Zhi-hong,WILLIAMS J J,THOM A J,et al.High temperature oxidation behavior of Ti5Si3-based intermetallics[J].Intermetallics,2008,16(9):1118-1124.
|
[3] |
MARUYAMA T,YANAGIHARA K.High temperature oxidation and pesting of Mo (Si,Al)2[J].Materials Science and Engineering A,1997,239/240:828-841.
|
[4] |
INUI H,ISHIKAWA K,YAMAGUCHI M.Effects of alloy-ing elements on plastic deformation of single crystals of MoSi2[J ].Intermetallics,2000,8(9/11):1131-1145.
|
[5] |
PETROVIC J J,VASUDEVAN A K.Key developments in high temperatures tructural silicides[J].Materials Science and Engineering A,1999,261(1/2):1-5.
|
[6] |
NAKANO T,KISHIMOTO M,FURUTA D.Effect of substitutational elements on plastic deformation behaviour of NbSi2-based silicide single crystals with C40 structure[J].Acta Metallurgica Materialia,2000,48(13):3465-3475.
|
[7] |
UMAKOSHI Y,NAKANO T,YANAGISAWA E.Effect of alloying elements on anomalous strengthening of NbSi2-based silicides with C40 structure[J].Materials Science and Engineering A,1997,239/240:102-108.
|
[8] |
BOETTINGER W J,PEREPEZKO J H,FRANKWICZ P S.Application of ternary phase diagrams to the development of MoSi2-based materials[J].Materials Science and Engineering A,1992,155(1/2):33-34.
|
[9] |
NAKANO T,AZUMA M,UMAKOSHI Y.Microstructure and high-temperature strength in MoSi2/NbSi2 duplex silicdes.Intermetallics[J].Intermetallics,1998,6(7/8):715-722.
|
[10] |
NAKANO T,NAKAI Y,MAEDA S,et al.Microstructure of duplex-phase NbSi2(C40)/MoSi2(C11b)crystals containing a single set of lamellae[J].Acta Materialia,2002,50(7):1781-1795.
|
[11] |
TANAKA K,NAWATA K,INUI H,et al.Refinement of crystallographic parameters in transition metal disilicides with the C11b,C40and C54 structures[J].Intermetallics,2001,9(7):603-607.
|
[12] |
闵乃本.晶体生长的物理基础[M].上海:上海科学技术出版社,1982.
|
[13] |
姚连增.晶体生长基础[M].合肥:中国科技大学出版社,1995.
|