Deposition of Al₂O₃ Thin Films by Electrostatic Spray Assisted Vapor Deposition Method

Electrostatic spray assisted vapor deposition (ESAVD) technique had been applied to deposite Al2O3 thin films on Si (100) substrate by using aluminum acetylacetonate as precursor and N,N-dimethylformamide as spraying solution.The films were characterized by XRD,FE-SEM,AFM and XPS.The results show that the thin films deposited by ESAVD technique were homogeneous and uniform,and no cracks appeared between film and substrate or in the film.The coalescent force of the Al2O3 film-Si substrate was 5.56 N.The deposited thin films were oxide films with a stoichiometric ratio of Al to O was 2∶3.The deposited thin films were amorphous and consisted of α-Al2O3 after annealing at 1 200 ℃ for 2 h.