- 中文核心期刊
- CSCD中国科学引文数据库来源期刊
- 中国科技核心期刊
- 中国机械工程学会材料分会会刊
| Citation: |
SHI Qianwen, ZHAO Hongfeng, XIE Qingyun, MENG Xiaoji. Effect of SiO2 Doping Amount on Electrical Performance of SnO2 Varistor[J]. Materials and Mechanical Engineering, 2024, 48(4): 57-62. DOI: 10.11973/jxgccl202404009
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SnO2 varistor doped with SiO2 of different mole fractions (0.01%, 0.05%, 0.10%, 0.15%, 0.20%) was prepared by traditional method. The effect of SiO2 doping amounts on the electrical performance of SnO2 varistor was studied. The results show that with the increase of SiO2 doping amounts, the voltage gradient, nonlinear coefficient, barrier height, donor density and interfacial state density of SnO2 varistor first increased and then decreased, the leakage current density first decreased and then increased, and the grain boundary resistance increased. When the mole fraction of SiO2 was 0.10%, the SnO2 varistor had the best comprehensive electrical performance, with the largest voltage gradient, nonlinear coefficient, donor density, interfacial state density and the barrier height, and the smallest leakage current density, which were 582 V·mm-1, 33, 1.7×1023 m-3, 6.7×1016 m-2, 2.03 eV, 7.06 μA·cm-2, respectively.
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